Bijou 3100
Bijou 3100
Bijou Series Three-Channel Integrated Amplifier with Line-level Subwoofer Output
SKU: ACP-BIJOU-3100
Bijou Series Three-Channel Integrated Amplifier with Line-level Subwoofer Output
SKU: ACP-BIJOU-3100
Next-generation GaN Semiconductor Amplification Technology
Bijou 3100D’s Class-D GaN amplification runs cool to the touch, enabling installation otherwise limited by traditional amplifier designs. GaN-based amplifier topologies achieve power conversion efficiencies in the 95% to 99% range, allowing higher output power in a more compact chassis size.
Compact Size
GaN implementation requires less circuit board real estate and no ancillary device components to govern thermal convection, resulting in cool-running smaller chassis dimensions with more placement options.
HDMI eARC Input
Video soundtracks from connected devices or internal streaming services feature immersive codecs like Dolby Atmos, or DTS surround audio. A unique eARC implementation for the Bijou Series enables GUI-assignable downmixing at the RCA outputs, enabling wireless headphone interfaces or Bluetooth adapters to provide private playback options. At the same time, original surround decoding continues at the powered speaker and subwoofer outputs.
Web Configurable and IP-, IR-Controllable
AudioControl provides a programmer-friendly API to integrate the Bijou 3100D into any popular automation ecosystem. Setup configuration is intuitive and fast via the web interface. An included remote enables stand-alone IR control.
INPUTS | |
eARC Inputs | 1 Audio-Only HDMI Input |
Digital Inputs | 1 Optical TOSLINK 1 Coax S/PDIF |
Analog Inputs | Stereo L/R RCA single-ended |
Analog Input Impedance | 47 kOhms |
Analog Input Sensitivity | 2 Vrms |
OUTPUTS | |
Preamp Outputs | 2 RCA single-ended |
Sub Output | 1 RCA single-ended |
Speaker Level Outputs | 3 outputs, 6-pin Euroblock connector |
Power Output | 100 W at 8 ohms 200 W at 4 ohms All Channels Driven |
AUDIO | |
Minimum Speaker Load | 4 ohms |
Frequency Range | 20 Hz to 20 kHz |
Total Harmonic Distortion | 0.15% |
DAC | 48 kHZ/24-bit |
POWER | |
Input Voltage | 110 - 240 VAC |
POWER CONSUMPTION | |
Standby | 3 W |
Typical loud listening (¹⁄₈th power) | 125 W |
Maximum | 700 W |
BTU/hr | |
Standby | 10 BTU/hr |
Typical loud listening (¹⁄₈th power) | 340 BTU/hr |
Maximum | 2046 BTU/hr |
DIMENSIONS | |
Height | 1.7 in (43.9 mm) |
Width | 8.3 in (211.3 mm) |
Depth | 11.9 in (302.2 mm) |
Weight | 6 lbs. (2.7 kg) |
Rack Space | 0.5 RU |
GaN amplification: The future of high-performance audio
GaN (Gallium Nitride) amplification uses a cutting-edge semiconductor material known for its high efficiency and superior performance. Originally developed for demanding applications like aerospace and telecommunications, GaN technology allows amplifiers to deliver potent power in a compact, thermally stable design, ensuring exceptional audio performance and reliability.
In the 1990s, GaN played a crucial role in making Blu-ray technology possible by enabling the development of blue laser diodes that produced 405 nm light directly without the aid of other optical mechanisms, a significant technological achievement.
Experience unmatched audio performance with GaN technology:
Superior audio quality: The incredible transient response of GaN semiconductors enables nearly perfect reproduction of the incoming audio waveform. Accurate tracking results in less ringing distortion that requires negative feedback to eliminate from audibility, which has always been the nemesis for audio fidelity in Class-D amplifier designs.
In GaN designs, there is virtually no turn-off overshoot of the waveform, which also masks details in the audio signal.
Higher operational switching frequencies, 800 kHz compared to 400 kHz for traditional Class-D MOSFET amplifiers, inherently reduce distortion to improve audio quality.